Programmable memory cell having semiconductor diodes

Details Programmable memory cell having semiconductor diodes Programmable memory cell having semiconductor diodes

G - Physics

11

C

352/81.1

G11C 11/36 (2006.01) G11C 17/16 (2006.01) H01L 23/525 (2006.01) H01L 27/06 (2006.01) H01L 27/102 (2006.01) H01L 29/04 (2006.01)

Patent

CA 1135855

1 PHF 77-568 ABSTRACT: Integrated electrically programmable read only memory cell having at least two back-to-back diodes. A first diode is formed by a planar junction between two superimposed regions, the second diode is programmable and is formed by a lateral junction between two coplanar zones of a thin semiconductor layer isolated from the body by an insulating layer having a contact aperture.

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