Programmable read only memory

Details Programmable read only memory Programmable read only memory

G - Physics

11

C

352/82

G11C 17/00 (2006.01) G11C 17/16 (2006.01)

Patent

CA 1044370

ABSTRACT OF THE DISCLOSURE A read-only memory which can be programmed by means of internal fuses and whose memory cells are formed by bipolar transistors in an ECL circuit. The emitters of the memory-position transistors are coupled to the emitter in a row-address transistor, the bases are connected directly to the emitter of a column read transistor, the collector lines include the fuses, and the rows and columns are supplied from current sources.

219934

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