Programmable read only memory cell

Details Programmable read only memory cell Programmable read only memory cell

G - Physics

11

C

352/82, 352/81.1

G11C 11/40 (2006.01) G11C 17/16 (2006.01) H01L 23/525 (2006.01) H01L 27/06 (2006.01) H01L 27/102 (2006.01) H01L 29/04 (2006.01)

Patent

CA 1135854

ABSTRACT Programmable read only memory in which the cells comprise a pn-junction diode and an electrically des- tructible programmable element. The diode is formed by a junction (4) between two regions (2,3) of a thin layer of (polycrystalline) semiconductor material present in an insulating layer covering a semiconductor body. The electrically destructible programmable element is formed by a portion of the thin semiconductor layer. Application to programmable read only memories. Fig. 2.

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