Programming flash memory analog storage using...

Details Programming flash memory analog storage using... Programming flash memory analog storage using...

G - Physics

11

C

G11C 16/02 (2006.01) G11C 11/56 (2006.01) G11C 16/10 (2006.01) G11C 27/00 (2006.01)

Patent

CA 2344791

The present invention is a method and apparatus to program a flash memory cell in an analog storage array. A read circuit reads a cell voltage of a flash memory cell. A comparator compares the read cell voltage with an input voltage representing an analog signal. The comparator generates first and second comparison results. A programming circuit generates a first program pulse corresponding to a first amplitude to iteratively program the flash memory cell based on the first comparison result. The programming circuit generates a second program pulse corresponding to a second amplitude less than the first amplitude to iteratively program the flash memory cell based on the first and second comparison results.

Affiliated with

Also associated with

Rating

Programming flash memory analog storage using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programming flash memory analog storage using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programming flash memory analog storage using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1563894