Programming flash memory analog storage using...

G - Physics – 11 – C

Patent

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G11C 16/02 (2006.01) G11C 11/56 (2006.01) G11C 16/10 (2006.01) G11C 27/00 (2006.01)

Patent

CA 2344791

The present invention is a method and apparatus to program a flash memory cell in an analog storage array. A read circuit reads a cell voltage of a flash memory cell. A comparator compares the read cell voltage with an input voltage representing an analog signal. The comparator generates first and second comparison results. A programming circuit generates a first program pulse corresponding to a first amplitude to iteratively program the flash memory cell based on the first comparison result. The programming circuit generates a second program pulse corresponding to a second amplitude less than the first amplitude to iteratively program the flash memory cell based on the first and second comparison results.

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