Protective coating for semiconductor substrates

Details Protective coating for semiconductor substrates Protective coating for semiconductor substrates

H - Electricity

01

L

204/96.31

H01L 21/56 (2006.01)

Patent

CA 1071140

PROTECTIVE COATING FOR SEMICONDUCTOR SUBSTRATES Abstract of the Disclosure A low-temperature, high-pressure, high-power process, which utilizes a radio frequency radial flow reactor, utilizes only silane and ammonia as the reactant gases for forming films on silicon substrates. The choice of appropriate operating conditions results in the deposition of essentially stoichiometric silicon nitride films having compressive stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and an inert barrier to sodium and moisture.

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