Protective semiconductor device utilizing back-to- back...

Details Protective semiconductor device utilizing back-to- back... Protective semiconductor device utilizing back-to- back...

H - Electricity

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356/31

H01L 27/02 (2006.01) H01L 27/08 (2006.01)

Patent

CA 1170784

RCA 74,612 PROTECTIVE SEMICONDUCTOR DEVICE UTILIZING BACK-TO-BACK ZENER DIODES ABSTRACT OF THE DISCLOSURE A semiconductor device utilized in a monolithic integrated circuit for protection against large voltage transients comprises back-to-back zener diodes formed by two separate regions of one type conductivity extending through an epitaxial layer of the opposite type conductivity and contacting a buried pocket of the opposite type conductivity to form PN junctions therewith. In the preferred embodiment, one of the one-type-conductivity regions completely surrounds the other region of one type conductivity.

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