Punch through modulated semiconductor device

Details Punch through modulated semiconductor device Punch through modulated semiconductor device

H - Electricity

01

L

356/149

H01L 29/76 (2006.01)

Patent

CA 1189981

PUNCH THROUGH MODULATED SEMICONDUCTOR DEVICE Abstract A field effect transistor having operating characteristics based on the control and modulation of the punch through phenomenon. The channel region between the source and the drain regions is appropriately doped such that the source and drain depletion regions overlap when no potential is applied between source and drain. The overlapped region in the absence of a gate field has a potential barrier. A gate voltage modulates the barrier to below the kT/q parameter. The source-to-drain fields also modulate the barrier.

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