Pure green light emitting diodes and method of manufacturing...

Details Pure green light emitting diodes and method of manufacturing... Pure green light emitting diodes and method of manufacturing...

H - Electricity

01

L

345/50

H01L 33/00 (2006.01)

Patent

CA 1237514

ABSTRACT OF THE DISCLOSURE Pure-green light emitting diodes comprise an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epi- taxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5 x 1016 cm-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a pre- scribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over- compensation method which is suitable for mass produc- tion.

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