Q-modulated semiconductor laser with electro-absorptive...

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H01S 5/026 (2006.01) G02F 1/01 (2006.01) H04B 10/145 (2006.01)

Patent

CA 2524911

A Q-modulated semiconductor laser comprises a .lambda./4-phase-shifted distributed-feedback grating. Two isolated electrodes are deposited on top of the grating, and one electrode is deposited on the back side of the laser substrate as a common ground. The first top-side electrode covers a portion of the grating including the phase-shift region, and provides an optical gain for the laser when a constant current is injected. The second top-side electrode covers the remaining portion of the grating away from the phase-shift region, which acts as a Q- modulator of the laser. An electrical signal is applied on the second electrode to change the absorption coefficient of the waveguide in the modulator section, resulting in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. The integrated Q-modulated laser has advantages of high speed, high extinction ratio, low wavelength chirp and low cost.

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