Quantum dot infrared photodetectors (qdip) and methods of...

Details Quantum dot infrared photodetectors (qdip) and methods of... Quantum dot infrared photodetectors (qdip) and methods of...

H - Electricity

01

L

H01L 31/0352 (2006.01)

Patent

CA 2268997

A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with direct normal incidence sensitivity without the assistance of light coupling devices or schemes. In the apparatus, stored charged carriers are ejected by photons from quantum dots, then flow over the other barrier and quantum dot layers with the help of an electric field produced with a voltage applied to the device, producing a detectable photovoltage and photocurrent. The photodetector has multiple layers of materials including at least one quantum dot layer between an emitter layer and a collector layer, with a barrier layer between the quantum dot layer and the emitter layer, and another barrier layer between the quantum dot layer and the collector.

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