Quantum efficiency improvements in active pixel sensors

Details Quantum efficiency improvements in active pixel sensors Quantum efficiency improvements in active pixel sensors

H - Electricity

04

N

H04N 3/14 (2006.01) H01L 27/146 (2006.01) H01L 27/148 (2006.01)

Patent

CA 2305727

Quantum efficiency in an active pixel sensor (100) improved by proper sizing and shaping of the contacts. The photodiode elements (102) are formed of special shapes that are optimized for obtaining diffusion of charge, rather than obtaining the charge directly. Photogates (Fig. 11) are formed with a thinned polysilicon covering.

L'invention concerne le rendement quantique dans un détecteur de pixels actif (100), qu'on peut améliorer par un dimensionnement et un formage appropriés des éléments de contact. Les éléments à photodiodes (102) présentent des formes spéciales qui sont optimisées pour obtenir une charge diffusée plutôt qu'une charge directe. Des grilles photoniques (Fig. 11) sont formées avec un revêtement en polysilicium aminci.

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