H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 27/146 (2006.01) H01L 21/77 (2006.01)
Patent
CA 2485328
Quantum efficiency in an active pixel sensor improved by proper sizing and shaping of the contacts. The photodiode elements are formed of special shapes that are optimized for obtaining diffusion of charge, rather than obtaining the charge directly. Photogates are formed with a thinned polysilicon covering
Mbm Intellectual Property Law Llp
Micron Technology Inc.
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