Quantum nano-structure semiconductor laser and quantum...

H - Electricity – 01 – S

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H01S 5/343 (2006.01) H01L 29/06 (2006.01) H01S 5/12 (2006.01) H01S 5/34 (2006.01) H01S 5/026 (2006.01)

Patent

CA 2477610

On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires are formed on the V-grooves by selective growth of a Group III-V compound. The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser. Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.

Selon l'invention, des fils quantiques (11) sont formés par croissance sélective de composés III-V dans des rainures en V d'un substrat à semi-conducteurs, les rainures en V s'étendant perpendiculairement à la direction (Is) de propagation d'un faisceau laser devant être soumis à oscillation et orienté parallèlement à la direction (Is). Les fils quantiques (11) se présentent sous la forme de régions de couches actives parallèles à la direction (Is) avec des angles égaux à un multiple entier d'un quart de la longueur d'onde moyenne dans la couche active laser, et présentant chacune une longueur infinie par rapport à la longueur du laser. Le laser à semi-conducteurs nanocomposite quantique selon l'invention présente une fréquence de seuil basse et/ou une fréquence d'oscillation stable, améliorées par rapport aux lasers connus.

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