Quantum structure infrared detector, uncooled

Details Quantum structure infrared detector, uncooled Quantum structure infrared detector, uncooled

H - Electricity

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H01L 31/101 (2006.01) G01J 1/02 (2006.01) G01J 3/02 (2006.01) G01J 5/02 (2006.01) H01L 31/0236 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2222855

The invention concerns a quantum structure detector incorporating a small-gap semiconductor material inserted between material two large-gap semi-conductors, the structure consisting of a coupling network between the wave to be detected and the detection zone made up of small-gap material. Under these conditions, the detection zone can be very thin (typically on the order of 1,000 .ANG.) and lead to limited detectivity by the high dark current. Application: Infrared detection.

L'invention concerne un détecteur, à structure quantique comportant un matériau semiconducteur à petit gap inséré entre deux matériaux semiconducteurs à grand gap, la structure comprenant un réseau de couplage entre l'onde à détecter et la zone détectrice constituée par le matériau à petit gap. Dans ces conditions, la zone détectrice peut être de très faible épaisseur (typiquement de l'ordre de 1 000 .ANG.) et conduire à une détectivité limitée par le courant d'obscurité, élevée. Application: Détection infrarouge.

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