Quantum well light emitting device with diffraction grating

Details Quantum well light emitting device with diffraction grating Quantum well light emitting device with diffraction grating

H - Electricity

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H01S 5/343 (2006.01) H01S 3/06 (2006.01) H01S 5/125 (2006.01) H01S 5/12 (2006.01)

Patent

CA 1275485

ABSTRACT OF THE DISCLOSURE Herein disclosed is a high efficiency light emitting semiconductor device which is operable stably at high speed and with a low threshold current. The light emitting double heterojunction semiconductor device of injection type comprises: a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type which is different from the first conductive type; an active layer composed of laminated semiconductor layers of the quantum wall structure interposed between the first and second semiconductor layers and having a narrower effective energy band gap than those of the first and second semiconductor layers; and a diffraction grating formed in either one of the first and second semiconductor layers.

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