Quantum well semiconductor laser device

Details Quantum well semiconductor laser device Quantum well semiconductor laser device

H - Electricity

01

S

H01S 5/343 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2068339

In a quantum-well type semiconductor laser device comprising a multi-layered quantum-well layer (active layer) constituted by quantum-well layers and a corresponding number of barrier layers and a pair of optical confinement layers respectively arranged on and under the active layer, since the number of quantum-well layers is limited to one or two, the device has a reduced internal loss, a narrowed far-field angle and a bandgap energy of the quantum-well layers greater than that of the optical confinement layers by 160meV ox more so that it shows a lowered threshold current density. Besides, by selecting a thickness of the quantum-well layers between 3 and 8nm, the device can be made to oscillate at the first quantum level in order to make the oscillation wavelength highly dependent on temperature and optical output and accordingly produce a high spectral purity.

Affiliated with

Also associated with

Rating

Quantum well semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum well semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum well semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1423145