Quantum wire fabricated via photo induced evaporation...

H - Electricity – 01 – L

Patent

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Details

H01L 23/535 (2006.01) H01L 21/20 (2006.01) H01L 21/268 (2006.01) H01L 21/768 (2006.01) H01L 23/482 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2041942

In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure.

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