Quasi-symmetrical bipolar transistor structure

Details Quasi-symmetrical bipolar transistor structure Quasi-symmetrical bipolar transistor structure

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H01L 29/72 (2006.01) H01L 21/20 (2006.01) H01L 21/28 (2006.01) H01L 21/74 (2006.01) H01L 21/762 (2006.01) H01L 27/082 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1161964

?79-055 QUASI-SYMMETRICAL BIPOLAR TRANSISTOR STRUCTURE ABSTRACT A symmetrical vertical bipolar transistor circuit is provided wherein the top junction and the bottom junctions are self-aligned. Both the top and bottom junctions of the bipolar transistor have substantially equal areas, thereby eliminating parasitic diodes. A method for fabricating the symmetrical bipolar transistor is also described, which includes preferred steps for self-alignment and simultaneous deposition of single crystal and polycrystalline regions.

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