G - Physics – 01 – T
Patent
G - Physics
01
T
G01T 1/24 (2006.01) H01L 27/146 (2006.01) H01L 31/04 (2006.01)
Patent
CA 2408725
A high withstand voltage insulating substance is formed between a radiation sensitive type amorphous semiconductor thick film suitable for forming a large area and an end edge portion of a voltage application electrode. As a result, concentration or an electric field on the end edge portion of the voltage application electrode is eliminated and a prestage phenomenon of penetration discharge or discharge breakdown is not caused.
Sato Kenji
Tokuda Satoshi
Riches Mckenzie & Herbert Llp
Shimadzu Corporation
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