Radiation detector

Details Radiation detector Radiation detector

H - Electricity

01

L

H01L 31/00 (2006.01) H01L 27/146 (2006.01) H01L 31/0248 (2006.01) H01L 49/02 (2006.01)

Patent

CA 2381523

A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.

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