G - Physics – 01 – T
Patent
G - Physics
01
T
G01T 1/02 (2006.01) G01T 1/24 (2006.01) H01L 31/119 (2006.01)
Patent
CA 2175224
A method for detecting ionizing radiation by allowing the radiation to affect the surface of the floating gate (13) of a MOSFET transistor (10) through an air or gas space. For this purpose, an uncovered area (17) is formed on the surface of the floating gate of the MOSFET transistor forming the detector. The MOSFET transistor is used so that a charge is formed on its floating gate, the charge changing as a result of the ionizing radiation the transistor is exposed to. The radiation dose is determined by the change which takes place in the charge on the gate.
L'invention concerne un procédé de détection de rayonnement ionisant qui consiste à permettre au rayonnement d'affecter la surface de la grille flottante (13) d'un transistor MOS à effet de champ (10) à travers un espace rempli d'air ou de gaz. Pour ce faire, une zone non couverte (17) est formée à la surface de la grille flottante du transistor MOS à effet de champ constituant le détecteur. Ledit transistor MOS à effet de champ est utilisé de sorte qu'une charge variable soit formée sur sa grille flottante selon le rayonnement ionisant auquel le transistor est exposé. La dose de rayonnement est déterminée en fonction du changement de charge sur la grille.
Oyen Wiggs Green & Mutala Llp
Rados Technology Oy
LandOfFree
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