Radiation induced deposition of metal on semiconductor surfaces

Details Radiation induced deposition of metal on semiconductor surfaces Radiation induced deposition of metal on semiconductor surfaces

H - Electricity

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148/3.5

H01L 21/445 (2006.01) C23C 18/14 (2006.01) H01L 21/288 (2006.01)

Patent

CA 1186601

RADIATION INDUCED DEPOSITION OF METAL ON SEMICONDUCTOR SURFACES Abstract of the Disclosure A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.

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