Radiation-resistant semiconductor device

Details Radiation-resistant semiconductor device Radiation-resistant semiconductor device

H - Electricity

01

L

356/184

H01L 29/167 (2006.01) H01L 21/261 (2006.01)

Patent

CA 1213377

- 1 - Abstract: A radiation-resistant semiconductor device whose electrical characteristics are not degraded by irradiation employs an impurity that is an isotope of an identical element which has a smaller thermal neutron absorption cross section. For example, boron B having a mass number of 11 serves as an acceptor, and antimony Sb having a mass number of 123 serves as a donor. When irradiated, the impurity under- goes a nuclear reaction much less than the other isotopes. Therefore, the impurity concentration changes little and the electrical characteristics fluctuate less.

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