G - Physics – 03 – F
Patent
G - Physics
03
F
96/252
G03F 7/039 (2006.01) G03F 7/004 (2006.01)
Patent
CA 1334351
Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrene-sulfone) and 2,6-dinitrobenzyl-p- toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.
591764
Houlihan Francis Michael
Reichmanis Elsa
Thompson Larry Flack
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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