Radiation-sensitive semiconductor device

Details Radiation-sensitive semiconductor device Radiation-sensitive semiconductor device

H - Electricity

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H01L 31/02 (2006.01) H01L 27/146 (2006.01) H01L 31/0352 (2006.01) H01L 31/103 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1243103

-12- ABSTRACT : Radiation-sensitive semiconductor device. The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (7) between a first semiconductor region (4) and a layer-shaped semiconductor zone (5,6), which in operation is fully depleted. The speed of such a diode is favourably influenced by the choice or the shape of the geometry of the layer-shaped zone (5,6). When the latter is formed with parts (6) decreasing in width of thickness, an electric field is produced in these parts which accelerates the transport of minority charge carriers to a central contact (13).

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