Radiation-sensitive semiconductor device and method of...

Details Radiation-sensitive semiconductor device and method of... Radiation-sensitive semiconductor device and method of...

H - Electricity

01

L

345/24

H01L 31/02 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1121898

PHN. 8881. ABSTRACT: The invention relates to a semiconductor device having an avalanche diode for detecting radiation, comprising a semiconductor body having a semiconductor layer structure of a first conductivity type, which layer structure comprises successively at least a first, low- doped semiconductor layer of substantially homogeneous doping, a second semiconductor layer having a doping con- centration which is higher than the doping concentration of the first layer, and a third semiconductor layer having a lower doping concentration than the second layer, said layer structure comprising on one side a first contact layer which forms a non-rectifying junction with the first semiconductor layer and comprising on the other side a second contact layer which forms a rectifying junction with the last semiconductor layer of the layer structure, a fourth semiconductor layer of the first conductivity type having a doping concentration which is higher than that of the third semiconductor layer.

310003

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