H - Electricity – 03 – G
Patent
H - Electricity
03
G
330/2, 330/39
H03G 3/30 (2006.01) H03G 1/00 (2006.01)
Patent
CA 1124805
C-3071 D-2,847 Abstract of the Disclosure A common gate field effect transistor amplifier has a source bias resistor effective to establish source bias voltage near pinch-off. A current source is connected through a diode having a dynamic RF impedance which varies inversely with direct current therethrough to the source of the field effect transistor. An increase in current from the current source in response to a change in an automatic gain control voltage causes increased current flow through the diode and conse- quently through the bias resistor to increase source voltage and thus reduce amplifier gain. The same increase of current through the diode reduces its dynamic RF signal impedance and allows shunt of RF signal therethrough and through a shunting capacitor to ground to further decrease gain of the amplifier and improve its overload characteristics.
341861
General Motors Corporation
Gowling Lafleur Henderson Llp
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