H - Electricity – 03 – G
Patent
H - Electricity
03
G
H03G 11/00 (2006.01) H03H 11/24 (2006.01)
Patent
CA 2263225
A variable attenuator comprises bipolar transistors Q1 and Q2 connected in reverse parallel between a point 1 and ground potential G. The base electrodes of the transistors Q1 and Q2 are biased independently by a control circuit 3. The collector of transistor Q1 and the emitter of transistor Q2 are commonly connected to a bias voltage provided by resistor R2 and voltage source Vr. The attenuator provides means by which the linearity, gain, power handling capabilities and noise figure of a front-end receiver can be altered. The attenuator is susceptible to integration in, for example, a radio receiver front-end.
Hill & Schumacher
Mitel Semiconductor Limited
LandOfFree
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