Rapid annealed boron implanted diodes

Details Rapid annealed boron implanted diodes Rapid annealed boron implanted diodes

H - Electricity

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H01L 21/31 (2006.01) H01L 21/02 (2006.01) H01L 21/268 (2006.01) H01L 21/321 (2006.01) H01L 21/3215 (2006.01) H01L 21/324 (2006.01) H01L 27/11 (2006.01)

Patent

CA 1213680

RAPID ANNEALED BORON IMPLANTED DIODES ABSTRACT OF THE DISCLOSURE An improved process in making a polysilicon resistor suitable for use as a load resistor in a static memory wherein after the doping of the polysilicon, the device is annealed by exposing it to a rapid increase of ambient temperature (up to between 900 and 1200°C), maintaining the high ambient temperature for a controlled time (about 5 seconds) and then lowering the ambient temperature at a rapid rate. This decreases resistance by one order of magnitude and significantly decreases the temperature activation energy of the resistor. This permits static memory cells to retain data even though the cell has high leakage currents, thereby improving final test yields.

463510

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