Rapid lpe crystal growth

Details Rapid lpe crystal growth Rapid lpe crystal growth

C - Chemistry, Metallurgy

30

B

148/2.55

C30B 19/00 (2006.01) C30B 19/06 (2006.01) C30B 19/08 (2006.01)

Patent

CA 1232184

-11- Abstract An apparatus and a method for growth of material on substrates. A substrate at temperature T2 is placed with a surface in contact with solution in streamline flow through a narrow channel. The solution enters the channel with a temperature, T1, which is above its saturation temperature, Ts. T2 is below Ts, so material will deposit on the sub- strate surface. The flow of solution is maintained high enough to avoid the onset of constitutional supercooling.

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