Rapid rate reactive sputtering of metallic compounds

C - Chemistry – Metallurgy – 23 – C

Patent

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204/96.1

C23C 14/34 (2006.01) C23C 14/00 (2006.01) C23C 14/35 (2006.01)

Patent

CA 1198085

RAPID RATE REACTIVE SPUTTERING OF METALLIC COMPOUNDS ABSTRACT A method of reactive sputtering of the nitride, oxide or carbide of titanium or similar materials onto a substrate (11) from a target (21) of the pure metal in a chamber (12) utilizing an inert gas, such as argon, wherein the deposition rate of the metallic compound approaches substantially the deposition rate of the pure metal. A reactive gas is introduced into the chamber adjacent to the target (21) at a constant flow and by a rapid pulsing wherein a valve is alternately opened and shut for very short time intervals.

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