H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/33
H01S 5/30 (2006.01) H01S 5/22 (2006.01) H01S 3/16 (2006.01)
Patent
CA 1288157
RARE EARTH DOPED SEMICONDUCTOR LASER Abstract A solid state laser is disclosed wherein a semiconductor active layer 103 is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earthion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quaternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.
547841
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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