Reactive ion etching

Details Reactive ion etching Reactive ion etching

H - Electricity

01

L

204/96.05

H01L 21/311 (2006.01)

Patent

CA 1122922

REACTIVE ION ETCHING Abstract A silicon oxide, nitride, and/or oxynitride surface on a substrate is selectively etched at a rate greater than that of the substrate by a reactive ion etching employing a gaseous mixture containing a fluorocarbon and a second gas capable of supplying hydrogen. YO977-011 XX

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