Reactive sputter etching of silicon

Details Reactive sputter etching of silicon Reactive sputter etching of silicon

C - Chemistry, Metallurgy

04

B

204/96.05

C04B 41/53 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1148895

Maydan, D.-17-3 - 15 - REACTIVE SPUTTER ETCHING OF SILICON Abstract In a chlorine plasma, reactive sputter etching of monocrystalline silicon, undoped polycrystalline silicon or doped polycrystalline silicon is achieved. The silicon member is maintained in contact with the cathode electrode of the apparatus. The etching processes are substantially free of any loading effects and are characterized by high resolution, excellent uniformity and high selectivity with respect to, for example, silicon dioxide. For silicon and undoped polysilicon, the edge profile of the etched material is anisotropic. For doped polysilicon, the edge profile can be controlled to occur anywhere in the range from completely isotropic to completely anisotropic.

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