Read only memory and integrated circuit and method of...

Details Read only memory and integrated circuit and method of... Read only memory and integrated circuit and method of...

G - Physics

11

C

352/82, 352/40.8

G11C 11/34 (2006.01) G11C 17/08 (2006.01) G11C 17/14 (2006.01) H01L 21/268 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1137630

IMPROVED READ ONLY MEMORY AND INTEGRATED CIRCUIT AND METHOD OF PROGRAMMING BY LASER MEANS Abstract of the Disclosure A programmable read only memory (PROM) includes a first plurality of conductive lines, a second plurality of con- ductive lines and polycrystalline silicon material there- between. At the crossing points of the first and second plurality of lines doped regions are provided in the poly- crystalline silicon in contact with a second line and which extend at least partially through the material. To provide a diode interconnect at any crossing point, the associated region is irradiated by a laser beam to either cause diffusion of dopant atoms to the underlaying conductive line or acti- vate implanted ions, thereby electrically interconnecting the first and second lines through a diode. The PROM is readily fabricated as part of a monolithic integrated circuit or electrical array and can be programmed after completion of the fabrication process.

343099

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