Read-only/read-write memory

Details Read-only/read-write memory Read-only/read-write memory

G - Physics

11

C

352/81

G11C 17/00 (2006.01) G11C 7/20 (2006.01) G11C 11/00 (2006.01) G11C 11/24 (2006.01) G11C 11/404 (2006.01) G11C 17/12 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1181847

-18- ABSTRACT OF THE DISCLOSURE READ-ONLY/READ-WRITE MEMORY The disclosed memory includes a semiconductor substrate having dopant atoms of a first conducivity type, a plurality of charge storage regions in the substrate, a conductive means over the charge storage regions, dopant atoms of a second conductivity type opposite to the first conductivity type disposed in a subset of the charge storage regions, and a means for selectively applying first and second voltages to the conductive means. With the first voltage applied to the conductive means, the memory operates in a read-only mode where data in the storage regions is fixed and is represented by the presence or absence of the second conductivity type dopant atoms; and with the second voltage applied, the memory operates as a read-write memory where data in the storage regions is variable and is independent of the presence or absence of the second conductivity type dopant atoms.

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