Rear entry photodiode

Details Rear entry photodiode Rear entry photodiode

H - Electricity

01

L

345/26

H01L 27/142 (2006.01) H01L 31/0304 (2006.01) H01L 31/105 (2006.01) H01L 31/109 (2006.01)

Patent

CA 1294349

REAR ENTRY PHOTODIODE ABSTRACT OF THE DISCLOSURE A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.

559788

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