H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/26
H01L 27/142 (2006.01) H01L 31/0304 (2006.01) H01L 31/105 (2006.01) H01L 31/109 (2006.01)
Patent
CA 1294349
REAR ENTRY PHOTODIODE ABSTRACT OF THE DISCLOSURE A semiconductor photodiode includes a substrate of semi-insulating indium phosphide having a first layer of highly doped P type indium phosphide on a surface thereof. An active second layer of N type indium gallium arsenide is on the first layer and a third layer of N type indium gallium arsenide or indium phosphide is on the second layer. The third layer may be entirely more highly doped than the second layer or may have a highly doped region on its surface. A first contact is on the third layer and a second contact is on the first layer. A buffer layer of lightly doped N or P type indium phosphide may be provided between the first layer and the second layer.
559788
Appert John Robert
Enstrom Ronald Edward
Webb Paul Perry
Company General Electric
Craig Wilson And Company
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