Recessed semiconductor device

Details Recessed semiconductor device Recessed semiconductor device

H - Electricity

01

L

356/131

H01L 27/04 (2006.01) H01L 21/306 (2006.01) H01L 21/60 (2006.01) H01L 23/13 (2006.01) H01L 23/14 (2006.01)

Patent

CA 1275331

Abstract: A semiconductor device is produced by the following process. Ionized material is poured to a predetermined depth in a silicon substrate to form an etching stopper layer. A predetermined area of the silicon substrate is then etched to the depth of the etching stopper layer to form a recess. A compound semiconductor chip is then located in the recess, and an insulating film is formed covering the space between the walls of the recess and the side walls of the chip so as to be patterned. Then a second thin film circuit is formed on the patterned insulating film so as to connect electrodes of the chip to a first thin film circuit that has previously been formed on the surface of the substrate. The resulting device is capable of high density packing and high speed operation.

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