Recovery of lower-boiling silanes in a cvd process

Details Recovery of lower-boiling silanes in a cvd process Recovery of lower-boiling silanes in a cvd process

C - Chemistry, Metallurgy

23

C

23/179, 117/86,

C23C 16/24 (2006.01) C01B 33/04 (2006.01) C01B 33/107 (2006.01) C23C 16/44 (2006.01)

Patent

CA 1319586

RECOVERY OF LOWER-BOILING SILANES IN A CVD PROCESS ABSTRACT A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising: (1) forming and depositing semiconductor silicon on a heated substrate; (2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/ deposition reactor; (3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon; (4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlososilane and dichlorosilane and increased in content of trichlorosilane; and (5) isolating and separating the trichlorosilane.

591088

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