Reducing nitrogen content in silicon carbide crystals by...

Details Reducing nitrogen content in silicon carbide crystals by... Reducing nitrogen content in silicon carbide crystals by...

C - Chemistry, Metallurgy

30

B

C30B 23/00 (2006.01) C30B 29/36 (2006.01)

Patent

CA 2533630

The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing all ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

L'invention concerne la régulation de la teneur en azote dans des cristaux de carbure de silicium et, notamment, la réduction de l'incorporation d'azote pendant la croissance par sublimation du carbure de silicium. L'invention concerne également la régulation de la teneur en azote dans un cristal de carbure de silicium se développant, par dispersion d'une atmosphère ambiante d'hydrogène dans la chambre de croissance. Les atomes d'hydrogène, en effet, bloquent, réduisent ou cachent d'une manière quelconque l'incorporation d'atomes d'azote au niveau de la surface du cristal se développant.

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