H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/39
H01L 21/42 (2006.01) H01L 21/263 (2006.01) H01L 29/167 (2006.01)
Patent
CA 1160359
46,467 ABSTRACT OF THE DISCLOSURE A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defect generation in thyristor on irradiation through the major surface with a given radiation source radiating particles with molecular weight greater than one, preferably proton or alpha part- icles, and adjusting the energy level at the major surface of the thyristor from the radiation source to provide the depth of maximum defect generation adjacent the anode PN junction and preferably in the anode base region within 20 micrometers of the anode PN junction or in the anode emitter region within 15 micrometers of the anode PN junction. Thereafter the thyristor is irradiated through said major surface with the adjusted energy level from the radiation source to a given dosage to reduce the reverse recovery stored charge of the thyristor without substan- tially increasing the forward voltage drop.
379882
Bartko John
Chu Chang K.
Schlegel Earl S.
Tarneja Krishan S.
Oldham And Company
Westinghouse Electric Corporation
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