Reducing the switching time of semiconductor devices by...

Details Reducing the switching time of semiconductor devices by... Reducing the switching time of semiconductor devices by...

H - Electricity

01

L

356/176

H01L 21/423 (2006.01) H01L 21/263 (2006.01)

Patent

CA 1131368

47,822 ABSTRACT OF THE DISCLOSURE The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1 x 1011 and 1 x 1015 neutrons per square centimeter. The irradiation is preferably to a dosage between 1 x 1011 and 1 x 1014 neutrons per square centi- meter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50°C higher than the highest specified temperature.

341867

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