H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/51, 148/3.8
H01S 5/20 (2006.01) C30B 31/00 (2006.01) H01S 5/323 (2006.01) H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01L 33/00 (2006.01)
Patent
CA 1040983
Abstract of the Disclosure Described is a procedure for virtually eliminating dislocations in multilayer structures of materials having a crystallographic zinc-blende structure, in particular quaternary layers of AlyGal-yASl-zPz grown on AlxGal-xAS substrates (Y > x ?O). By carefully controlling the quaternary layer thickness and the lattice parameter mismatch at the growth temperature, it is possible to change the direction of substrate dislocations as they enter the substrate/layer interface. The length of the dislocation in the interracial plane can be extended so that it is "infinitely" long, i.e., it reaches the edge of the water. As a result, the epitaxial quaternary layer and all layers subsequently grown thereon will be virtually dislocation free, provided that the thickness, stress and uniformity of the layers are such that no surface dislocation sources are activated. Also described are double heterostructure junction lasers with reduced values of both stress and dislocations.
208556
Petroff Pierre M.
Rozgonyi George A.
Na
Western Electric Company Incorporated
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