H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/130
H01L 29/10 (2006.01) H01L 27/02 (2006.01) H01L 29/00 (2006.01) H01L 29/06 (2006.01)
Patent
CA 1012259
Enzlin Theodoor H.
Smulders Walter H.m.m.
LandOfFree
Reduction of second breakdown in planar transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduction of second breakdown in planar transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of second breakdown in planar transistors will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-486737