Reference voltage generator device

Details Reference voltage generator device Reference voltage generator device

H - Electricity

01

L

356/149

H01L 21/74 (2006.01) H01L 21/28 (2006.01)

Patent

CA 1145063

REFERENCE VOLTAGE GENERATOR DEVICE Abstract of the Disclosure The method is for manufacturing a semiconductor device with at least a pair of insulated gate field-effect transistors having semiconductor gate electrodes of different conductivity types. A semiconductor layer of one conductivity type is selectively removed to provide patterns of first and second gate electrodes, and a mask is formed over the first gate electrode except for the second gate electrode. Thereafter, an impurity of the opposite conductivity type is introduced into the surface of a semiconductor substrate, over which the first and second gate electrodes are formed, to form source and drain semiconductor regions on opposite sides of each of the first and second gate electrodes and to convert the conductivity type of the unmasked second gate electrode to the opposite conductivity type. The method has the advantage of enabling manufacture of an improved semi- conductor device without increasing the number of fabrication steps.

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