C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/327, 148/3.7
C01B 33/02 (2006.01) C01B 33/12 (2006.01) C30B 15/00 (2006.01)
Patent
CA 1135941
ABSTRACT OF THE DISCLOSURE Silicon platelets essentially free of iron are precipitated from a solution of metallurgical grade silicon in molten aluminum and are melted in contact with silica slag to produce a refined metallurgical silicon (RMS). Multigrained bouler of said RMS may be pulled by the Czochralski method on a rotating silicon seed rod from a melt of said RMS. Alternatively, the silicon-slag melt can be directionally solidified to produce a directionally solidified refined metallurgical silicon (DS/RMS) separated from a region of solidified melt having a high concentra- tion of impurities rejected by the silicon as it solidifies, Multigrained DS/RMS boules may be pulled from a melt of said DS/RMS. Alternatively, the DS/RMS is remelted and directionally solidified a second time with single crystal DS/RMS boules being pulled from a melt of the twice directionally solidified material. The thus-pulled, jul multigrained RMS and DS/RMS and single crystal DS/RMS materials are low-cost products having a substantially higher impurity content than in conventional high purity semiconductor grade silicon while, at the same time, having desirable solar cell properties.
316087
Kotval Peshotan S.
Strock Harold B.
Hopley William G.
Union Carbide Corporation
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