H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/137
H01L 21/285 (2006.01) H01L 21/28 (2006.01) H01L 21/768 (2006.01) H01L 23/48 (2006.01) H01L 23/532 (2006.01) H01L 29/40 (2006.01) H01L 29/49 (2006.01)
Patent
CA 1306072
B??-86-011 ABSTRACT OF THE DISCLOSURE The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin layer of titanium nitride and a thick layer of a refractory metal, e.g., tungsten or molybdenum, overlying the titanium nitride layer.
556673
Cronin John E.
Kaanta Carter W.
Leach Michael A.
Lee Pei-Ing P.
Pan Pai-Hung
International Business Machines Corporation
Saunders Raymond H.
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