Relaxed inxga(1-x)as graded buffers

Details Relaxed inxga(1-x)as graded buffers Relaxed inxga(1-x)as graded buffers

H - Electricity

01

L

H01L 21/20 (2006.01)

Patent

CA 2311787

InxGa1-xAs structures with compositionally graded buffers (104) grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs (102); and epitaxially growing a relaxed graded layer of InxGa1-xAs (104) at a temperature ranging upwards from about 600 ~C.

L'invention concerne des structures de In¿x?Ga¿1-x?As avec des tampons (104) dont la composition est graduée, obtenues par épitaxie organométallique en phase vapeur, sur des substrats de GaAs. L'invention concerne une structure de semiconducteur et un procédé pour traiter ladite structure consistant à prévoir un substrat de GaAs (102) et développer par épitaxie une couche graduée sans contrainte dans la structure de In¿x?Ga¿1-x?As (104), à une température supérieure à environ 600 ·C.

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