Removal of projections on epitaxial layers

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H01L 21/3105 (2006.01) H01L 21/308 (2006.01)

Patent

CA 1042115

REMOVAL OF PROJECTIONS ON EPITAXIAL LAYERS Abstract of the Disclosure A method for removing projections from the surface of epitaxially-deposited semiconductor layers is described. These projections can adversely affect the results of photo- lithographic processing. The method comprises forming an oxide layer on the surface and mechanically fracturing the oxide-coated projections. In the ensuing step anisotropic semiconductor etchants are applied to the surface to remove the projections selectively.

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