Resist process using polysulfone polymers

Details Resist process using polysulfone polymers Resist process using polysulfone polymers

G - Physics

03

C

96/175, 204/91.2

G03C 1/73 (2006.01) C08F 128/02 (2006.01) G03F 7/039 (2006.01)

Patent

CA 1286905

RESIST PROCESS USING POLYSULFONE POLYMERS Abstract of the Disclosure A resist mask is formed on a substrate by first forming a film of an olefin-sulfone polymer on the surface of the substrate and patterning the film to expose part of the surface. The patterning operation includes exposing portions of the film to degrading radiation. Background of the Invention This invention relates generally to the formation of resist masks and more particularly to the formation of positive resist masks of olefin- sulfur dioxide polymers such as by electron beam exposure. The formation of etch resistant positive resist masks using radi- ation degradable polymers and copolymers is described, for example, in United States Patent 3,535,137. A layer of polymer is applied to a sub- strate and the portions of the layer to be removed are exposed to an electron beam or other radiation which acts to reduce the molecular weight of the polymer in the energy struck areas. The polymer in the energy struck areas is then selectively removed with a solvent developer solution which preferentially dissolves the lower molecular weight material leaving a patterned protective layer of polymer covering the unexposed areas. Such processes are especially suitable for use in the manufacture of high density, micro-miniaturized electronic integrated circuit structures because of the high resolution obtainable by the use of electron beam exposure. In order to decrease the time needed to form circuit structures using electron beam lithography, polymers having increased radiation sensitivity are desirable.

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